| PART |
Description |
Maker |
| SPW11N80C3 SPW11N80C3-11 |
New revolutionary high voltage technology
|
Infineon Technologies A...
|
| SPP20N65C3 SPI20N65C3 SPP20N65C307 SPA20N65C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220
|
Infineon Technologies AG
|
| SPA11N80C3 SPA11N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPA11N60CFD SPA11N60CFD10 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPB04N60S5 SPB04N60S507 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP20N60CFD05 SPP20N60CFD |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPW17N80C3 SPW17N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP03N60C3 SPP03N60C309 SPA03N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP08N80C308 SPP08N80C3-08 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
Infineon Technologies A...
|
| IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
